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| MITSUBISHI SEMICONDUCTOR MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. 176.+0'&4#9+0) 7PKVOKNNKOGVGTU KPEJGU r r FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=2.1 - 2.3 GHz High power gain GLP = 12 dB (TYP.) @ f=2.1 - 2.3GHz High power added efficiency P.A.E. = 45 % (TYP.) @ f=2.1 - 2.3GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L. /+0 /+0 r r r r r r /+0 /+0 r r APPLICATION item 01 : 2.1 - 2.3 GHz band power amplifier item 51 : 2.1 - 2.3 GHz band digital radio communication QUALITY GRADE IG r r RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 6.5 (A) RG=25 (ohm) )#6' 5174%' (.#0)' &4#+0 )( (Ta=25deg.C) Ratings -15 -15 22 -61 76 100 175 -65 / +175 Unit V V A mA mA W deg.C deg.C ABSOLUTE MAXIMUM RATINGS Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current IGR Reverse gate current IGF Forward gate current PT *1 Total power dissipation Tch Channel temperature Tstg Storage temperature *1 : Tc=25deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. ELECTRICAL CARACTERISTICS Symbol VGS(off) P1dB GLP ID P.A.E. IM3 *2 Rth(ch-c) *3 (Ta=25deg.C) Test conditions VDS = 3V , ID = 60mA Min. 44 VDS=10V, ID(RF off)=6.5A, f=2.1 - 2.3GHz 11 -42 Limits Typ. Max. -5 45 12 7.5 45 -45 1.5 Unit V dBm dB A % dBc deg.C/W Parameter Saturated drain current Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance delta Vf method *2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=2.1,2.2,2.3GHz,dfelta f=5MHz *3 : Channel-case MITSUBISHI ELECTRIC r r r June-'04 MITSUBISHI SEMICONDUCTOR MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June-'04 |
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